IRF6665TRPBF
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 4.2A DIRECTFET
$1.54
Available to order
Reference Price (USD)
4,800+
$0.45060
9,600+
$0.43366
Exquisite packaging
Discount
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| EMS | 3-7 days |
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IRF6665TRPBF
$1.54
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 62mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET™ SH
- Package / Case: DirectFET™ Isometric SH
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