APT20M18B2VFRG
Microchip Technology
Microchip Technology
MOSFET N-CH 200V 100A T-MAX
$27.49
Available to order
Reference Price (USD)
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$27.48900
500+
$27.21411
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$26.93922
1500+
$26.66433
2000+
$26.38944
2500+
$26.11455
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APT20M18B2VFRG
$27.49
Product details
The APT20M18B2VFRG from Microchip Technology is a technologically advanced single MOSFET transistor belonging to the Discrete Semiconductor Products family (Transistors - FETs, MOSFETs - Single). This component sets new standards in power switching efficiency, offering designers a perfect balance between performance and reliability. Engineered with precision, the APT20M18B2VFRG demonstrates outstanding characteristics including fast switching capability, low power dissipation, and excellent thermal stability. These features make it particularly suitable for high-frequency applications and power-sensitive designs. The MOSFET finds extensive use in electric vehicle components, industrial welding equipment, and advanced power supply units. It's equally effective in consumer electronics such as high-efficiency LED drivers, smart appliances, and portable electronic devices. For infrastructure applications, the APT20M18B2VFRG proves invaluable in telecom power systems, base station equipment, and railway electronics. Its rugged design ensures consistent performance even in challenging operating conditions. Design engineers will appreciate the component's versatility and the design flexibility it offers across multiple voltage and current ranges. To learn more about how the APT20M18B2VFRG can enhance your specific application, we invite you to submit an online inquiry. Our technical sales team stands ready to provide detailed product information and purchasing options tailored to your project needs.
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 18mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 9880 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: T-MAX™ [B2]
- Package / Case: TO-247-3 Variant
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