IPBE65R050CFD7AATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 45A TO263-7
$15.85
Available to order
Reference Price (USD)
1+
$15.85000
500+
$15.6915
1000+
$15.533
1500+
$15.3745
2000+
$15.216
2500+
$15.0575
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Infineon Technologies IPBE65R050CFD7AATMA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
IPBE65R050CFD7AATMA1
$15.85
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 24.8A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
- Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 227W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-3-10
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
