SPB80N06S08ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 55V 80A TO263-3
$1.87
Available to order
Reference Price (USD)
1+
$1.86827
500+
$1.8495873
1000+
$1.8309046
1500+
$1.8122219
2000+
$1.7935392
2500+
$1.7748565
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SPB80N06S08ATMA1
$1.87
Product details
General specs
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 7.7mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 4V @ 240µA
- Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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