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IPB80N06S207ATMA4

Infineon Technologies
IPB80N06S207ATMA4 Preview
Infineon Technologies
MOSFET N-CH 55V 80A TO263-3
$1.46
Available to order
Reference Price (USD)
1,000+
$1.03372
Exquisite packaging
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Infineon Technologies IPB80N06S207ATMA4 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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IPB80N06S207ATMA4

IPB80N06S207ATMA4

$1.46

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55 V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 6.3mOhm @ 68A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 180µA
  • Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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