SCTW40N120G2VAG
STMicroelectronics
STMicroelectronics
SICFET N-CH 1200V 33A HIP247
$23.12
Available to order
Reference Price (USD)
1+
$23.12000
500+
$22.8888
1000+
$22.6576
1500+
$22.4264
2000+
$22.1952
2500+
$21.964
Exquisite packaging
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SCTW40N120G2VAG
$23.12
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 105mOhm @ 20A, 18V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 18 V
- Vgs (Max): +22V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 290W (Tc)
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: HiP247™
- Package / Case: TO-247-3
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