IPB029N06N3GE8187ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 120A D2PAK
$1.69
Available to order
Reference Price (USD)
1,000+
$1.06706
Exquisite packaging
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IPB029N06N3GE8187ATMA1
$1.69
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id: 4V @ 118µA
- Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 188W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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