MSC040SMA120B
Microchip Technology
Microchip Technology
SICFET N-CH 1200V 66A TO247-3
$22.09
Available to order
Reference Price (USD)
1+
$22.09000
500+
$21.8691
1000+
$21.6482
1500+
$21.4273
2000+
$21.2064
2500+
$20.9855
Exquisite packaging
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Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.7V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
- Vgs (Max): +23V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 323W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3