IKW75N65EH5XKSA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH 650V 90A TO247-3
$7.37
Available to order
Reference Price (USD)
1+
$7.71000
10+
$7.02000
240+
$5.90542
720+
$5.21278
1,200+
$4.61048
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IKW75N65EH5XKSA1
$7.37
Product details
The IKW75N65EH5XKSA1 by Infineon Technologies is a cutting-edge single IGBT transistor designed for high-power applications. This discrete semiconductor product excels in environments where efficiency and durability are paramount. Featuring excellent thermal conductivity and low switching losses, the IKW75N65EH5XKSA1 is ideal for use in electric vehicle charging stations, welding equipment, and industrial automation systems. Its robust construction ensures reliable operation even under extreme temperatures and voltage fluctuations. Engineers will appreciate its straightforward installation and compatibility with various drive circuits. Upgrade your power management systems with the IKW75N65EH5XKSA1 and experience unmatched performance. Contact us today for more details and pricing options.
General specs
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 90 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
- Power - Max: 395 W
- Switching Energy: 2.3mJ (on), 900µJ (off)
- Input Type: Standard
- Gate Charge: 160 nC
- Td (on/off) @ 25°C: 28ns/174ns
- Test Condition: 400V, 75A, 8Ohm, 15V
- Reverse Recovery Time (trr): 92 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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