AFGY160T65SPD-B4
onsemi
onsemi
IGBT - 650V, 160A FIELD STOP TRE
$13.28
Available to order
Reference Price (USD)
1+
$13.28500
500+
$13.15215
1000+
$13.0193
1500+
$12.88645
2000+
$12.7536
2500+
$12.62075
Exquisite packaging
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AFGY160T65SPD-B4
$13.28
Product details
Maximize power efficiency with the AFGY160T65SPD-B4 single IGBT transistor by onsemi. This high-quality component is engineered for applications requiring robust switching and thermal stability, such as renewable energy systems, industrial welding machines, and electric vehicle powertrains. The AFGY160T65SPD-B4 features low switching losses and high current capacity, ensuring reliable performance in demanding conditions. Its compact design and ease of integration make it a favorite among power electronics designers. Whether you're working on large-scale industrial projects or compact consumer electronics, the AFGY160T65SPD-B4 delivers the performance you need. Get started today by submitting an online inquiry for pricing and availability.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 240 A
- Current - Collector Pulsed (Icm): 480 A
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 160A
- Power - Max: 882 W
- Switching Energy: 12.4mJ (on), 5.7mJ (off)
- Input Type: Standard
- Gate Charge: 245 nC
- Td (on/off) @ 25°C: 53ns/98ns
- Test Condition: 400V, 160A, 5Ohm, 15V
- Reverse Recovery Time (trr): 132 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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