IKW50N65RH5XKSA1
Infineon Technologies
Infineon Technologies
INDUSTRY 14
$8.61
Available to order
Reference Price (USD)
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$8.61000
500+
$8.5239
1000+
$8.4378
1500+
$8.3517
2000+
$8.2656
2500+
$8.1795
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IKW50N65RH5XKSA1
$8.61
Product details
The IKW50N65RH5XKSA1 from Infineon Technologies is a state-of-the-art single IGBT transistor designed for high-power switching applications. This discrete semiconductor product is ideal for use in solar inverters, motor drives, and power distribution systems, offering exceptional efficiency and durability. With its low conduction losses and high thermal conductivity, the IKW50N65RH5XKSA1 ensures reliable operation in extreme environments. Engineers will appreciate its fast switching speed and compatibility with various control circuits. Upgrade your power management solutions with the IKW50N65RH5XKSA1 and achieve superior performance. For more information and to place an order, contact us today.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Power - Max: 305 W
- Switching Energy: 230µJ (on), 180µJ (off)
- Input Type: Standard
- Gate Charge: 120 nC
- Td (on/off) @ 25°C: 22ns/180ns
- Test Condition: 400V, 25A, 12Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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