HGT1S15N120C3
Harris Corporation
Harris Corporation
35A, 1200V, N-CHANNEL IGBT
$3.71
Available to order
Reference Price (USD)
1+
$3.71000
500+
$3.6729
1000+
$3.6358
1500+
$3.5987
2000+
$3.5616
2500+
$3.5245
Exquisite packaging
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HGT1S15N120C3
$3.71
Product details
Enhance your power control systems with the HGT1S15N120C3 single IGBT transistor from Harris Corporation. This high-performance component is tailored for applications demanding efficient energy conversion and minimal heat generation. The HGT1S15N120C3 is widely used in wind turbine inverters, HVAC systems, and medical power supplies, thanks to its exceptional reliability and fast response times. Its advanced architecture ensures low conduction losses and high switching frequencies, making it a top choice for modern power electronics. Whether you're upgrading existing systems or designing new ones, the HGT1S15N120C3 offers the flexibility and performance you need. Submit your inquiry online to learn more about this versatile IGBT transistor.
General specs
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 35 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 15A
- Power - Max: 164 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 100 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
- Supplier Device Package: I2PAK (TO-262)
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