HGTG5N120BND
onsemi
onsemi
IGBT NPT 1200V 21A TO247-3
$3.22
Available to order
Reference Price (USD)
1+
$2.93000
10+
$2.64000
450+
$2.07273
900+
$1.86929
1,350+
$1.59089
Exquisite packaging
Discount
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HGTG5N120BND
$3.22
Product details
The HGTG5N120BND from onsemi is a high-performance single IGBT transistor designed for efficient power switching. This discrete semiconductor product is widely used in UPS systems, induction heating, and electric vehicle applications. With its low saturation voltage and excellent thermal management, the HGTG5N120BND ensures minimal energy loss and maximum reliability. Its compact design and easy integration make it a versatile choice for various power electronics projects. Engineers will find its high current handling and fast switching capabilities invaluable. Discover the potential of the HGTG5N120BND for your applications request a quote today.
General specs
- Product Status: Last Time Buy
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 21 A
- Current - Collector Pulsed (Icm): 40 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A
- Power - Max: 167 W
- Switching Energy: 450µJ (on), 390µJ (off)
- Input Type: Standard
- Gate Charge: 53 nC
- Td (on/off) @ 25°C: 22ns/160ns
- Test Condition: 960V, 5A, 25Ohm, 15V
- Reverse Recovery Time (trr): 65 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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