IGW25N120H3FKSA1
Infineon Technologies

Infineon Technologies
IGBT 1200V 50A 326W TO247-3
$6.08
Available to order
Reference Price (USD)
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$6.17000
10+
$5.58500
240+
$4.64683
720+
$4.01446
1,200+
$3.44749
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Infineon Technologies IGW25N120H3FKSA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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Product details
Experience unparalleled power control with the IGW25N120H3FKSA1 single IGBT transistor by Infineon Technologies. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The IGW25N120H3FKSA1 boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the IGW25N120H3FKSA1 offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
- Power - Max: 326 W
- Switching Energy: 2.65mJ
- Input Type: Standard
- Gate Charge: 115 nC
- Td (on/off) @ 25°C: 27ns/277ns
- Test Condition: 600V, 25A, 23Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-1