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AIKB30N65DF5ATMA1

Infineon Technologies
AIKB30N65DF5ATMA1 Preview
Infineon Technologies
IC DISCRETE 650V TO263-3
$5.33
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Infineon Technologies AIKB30N65DF5ATMA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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AIKB30N65DF5ATMA1

AIKB30N65DF5ATMA1

$5.33

Product details

Enhance your power control systems with the AIKB30N65DF5ATMA1 single IGBT transistor from Infineon Technologies. This high-performance component is tailored for applications demanding efficient energy conversion and minimal heat generation. The AIKB30N65DF5ATMA1 is widely used in wind turbine inverters, HVAC systems, and medical power supplies, thanks to its exceptional reliability and fast response times. Its advanced architecture ensures low conduction losses and high switching frequencies, making it a top choice for modern power electronics. Whether you're upgrading existing systems or designing new ones, the AIKB30N65DF5ATMA1 offers the flexibility and performance you need. Submit your inquiry online to learn more about this versatile IGBT transistor.

General specs

  • Product Status: Active
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 55 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 188 W
  • Switching Energy: 330µJ (on), 100µJ (off)
  • Input Type: Standard
  • Gate Charge: 70 nC
  • Td (on/off) @ 25°C: 25ns/188ns
  • Test Condition: 400V, 15A, 23Ohm, 15V
  • Reverse Recovery Time (trr): 67 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: PG-TO263-3

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