IKB10N60TATMA1
Infineon Technologies
Infineon Technologies
IGBT 600V 20A 110W TO263-3
$2.36
Available to order
Reference Price (USD)
1,000+
$1.17933
2,000+
$1.09800
5,000+
$1.08444
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IKB10N60TATMA1
$2.36
Product details
Experience unparalleled power control with the IKB10N60TATMA1 single IGBT transistor by Infineon Technologies. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The IKB10N60TATMA1 boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the IKB10N60TATMA1 offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.
General specs
- Product Status: Active
- IGBT Type: NPT, Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): 30 A
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 10A
- Power - Max: 110 W
- Switching Energy: 430µJ
- Input Type: Standard
- Gate Charge: 62 nC
- Td (on/off) @ 25°C: 12ns/215ns
- Test Condition: 400V, 10A, 23Ohm, 15V
- Reverse Recovery Time (trr): 115 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
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