HGT1S12N60B3D
Harris Corporation
Harris Corporation
27A, 600V, N-CHANNEL IGBT
$1.26
Available to order
Reference Price (USD)
1+
$1.26000
500+
$1.2474
1000+
$1.2348
1500+
$1.2222
2000+
$1.2096
2500+
$1.197
Exquisite packaging
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HGT1S12N60B3D
$1.26
Product details
Optimize your power electronics with the HGT1S12N60B3D single IGBT transistor from Harris Corporation. This high-efficiency component is engineered to deliver superior switching performance and thermal management, ensuring long-term reliability in harsh operating conditions. The HGT1S12N60B3D is perfect for applications requiring precise control and high power handling, such as industrial motor drives, UPS systems, and solar inverters. Its low saturation voltage and fast switching speed minimize energy loss, improving overall system efficiency. Designed for easy integration, this IGBT transistor is a must-have for engineers seeking dependable power solutions. Discover how the HGT1S12N60B3D can enhance your next project request a quote now.
General specs
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 27 A
- Current - Collector Pulsed (Icm): 110 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
- Power - Max: 104 W
- Switching Energy: 304µJ (on), 250µJ (off)
- Input Type: Standard
- Gate Charge: 78 nC
- Td (on/off) @ 25°C: 26ns/150ns
- Test Condition: 480V, 12A, 25Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
- Supplier Device Package: I2PAK (TO-262)
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