IDW20G65C5XKSA1
Infineon Technologies
Infineon Technologies
DIODE SCHOTTKY 650V 20A TO247-3
$10.15
Available to order
Reference Price (USD)
1+
$9.73000
10+
$8.85800
240+
$7.45746
720+
$6.58678
1,200+
$5.82967
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IDW20G65C5XKSA1
$10.15
Product details
The IDW20G65C5XKSA1 from Infineon Technologies is a high-performance single rectifier diode designed for efficient power conversion in various electronic applications. This diode ensures reliable operation with its robust construction and advanced semiconductor technology. Ideal for both industrial and consumer electronics, the IDW20G65C5XKSA1 offers excellent forward voltage characteristics and low reverse leakage current, making it a versatile choice for designers. Its compact form factor allows for easy integration into space-constrained designs. Whether you're working on power supplies, battery chargers, or signal demodulation circuits, this diode delivers consistent performance. Key features include fast switching capabilities, high surge current tolerance, and superior thermal management. Common applications include automotive systems, renewable energy inverters, and telecommunications equipment. For pricing and availability, submit an inquiry today to find the perfect solution for your project needs.
General specs
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 20A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 210 µA @ 650 V
- Capacitance @ Vr, F: 590pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3-41
- Operating Temperature - Junction: -55°C ~ 175°C
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