FESB16DT-E3/81
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 16A TO263AB
$1.81
Available to order
Reference Price (USD)
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$1.81000
500+
$1.7919
1000+
$1.7738
1500+
$1.7557
2000+
$1.7376
2500+
$1.7195
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FESB16DT-E3/81
$1.81
Product details
General specs
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io): 16A
- Voltage - Forward (Vf) (Max) @ If: 975 mV @ 16 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 200 V
- Capacitance @ Vr, F: 175pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Operating Temperature - Junction: -65°C ~ 150°C
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