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FS03MR12A6MA1BBPSA1

Infineon Technologies
FS03MR12A6MA1BBPSA1 Preview
Infineon Technologies
HYBRID PACK DRIVE SIC AG-HYBRIDD
$3,516.48
Available to order
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Infineon Technologies FS03MR12A6MA1BBPSA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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FS03MR12A6MA1BBPSA1

FS03MR12A6MA1BBPSA1

$3,516.48

Product details

Discover the FS03MR12A6MA1BBPSA1 from Infineon Technologies, a high-efficiency MOSFET array in the Discrete Semiconductor Products category. As part of the Transistors - FETs, MOSFETs - Arrays subcategory, this product is engineered for applications demanding high power density and reliability. Its advanced design ensures optimal performance in a wide range of electronic systems.\n\nThe FS03MR12A6MA1BBPSA1 features low on-resistance, fast switching characteristics, and excellent thermal stability. The array format simplifies circuit design by consolidating multiple FETs, reducing board space and improving system efficiency. With superior electrical performance, it meets the needs of high-performance applications.\n\nCommon uses include server power supplies, electric vehicle charging stations, and medical equipment. Server power supplies benefit from its high efficiency and reliability. EV charging stations utilize its robust performance for safe and fast charging. Medical equipment relies on its precision and durability for critical operations.\n\nGet started with the FS03MR12A6MA1BBPSA1 today. Request a quote to explore how this MOSFET array can meet your project requirements. Our support team is here to assist you every step of the way.

General specs

  • Product Status: Active
  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 400A (Tj)
  • Rds On (Max) @ Id, Vgs: 3.7mOhm @ 400A, 15V
  • Vgs(th) (Max) @ Id: 5.55V @ 240mA
  • Gate Charge (Qg) (Max) @ Vgs: 1320nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 42.5nF @ 600V
  • Power - Max: 20mW
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-HYBRIDD-2

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