MSCSM170HM12CAG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD-SP6C
$1,053.73
Available to order
Reference Price (USD)
1+
$1053.73000
500+
$1043.1927
1000+
$1032.6554
1500+
$1022.1181
2000+
$1011.5808
2500+
$1001.0435
Exquisite packaging
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| EMS | 3-7 days |
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MSCSM170HM12CAG
$1,053.73
Product details
General specs
- Product Status: Active
- FET Type: 4 N-Channel (Full Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1700V (1.7kV)
- Current - Continuous Drain (Id) @ 25°C: 179A (Tc)
- Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V
- Vgs(th) (Max) @ Id: 3.2V @ 7.5mA
- Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V
- Power - Max: 843W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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