FP10R12W1T4B3BOMA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 20A 105W
$36.94
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Reference Price (USD)
24+
$32.24500
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FP10R12W1T4B3BOMA1
$36.94
Product details
The FP10R12W1T4B3BOMA1 transistor from Infineon Technologies is a versatile component in the discrete semiconductor products category. Designed for high-speed switching and low power dissipation, this transistor is a reliable choice for various electronic circuits. Its robust design ensures long-term stability and performance, even under demanding conditions. The FP10R12W1T4B3BOMA1 is particularly effective in audio amplifiers, delivering clear and distortion-free sound. It also performs exceptionally well in power supply units, ensuring efficient voltage regulation. Another common application is in lighting systems, where it provides precise control over brightness and energy usage. For engineers and designers looking for a dependable transistor, the FP10R12W1T4B3BOMA1 is an excellent option. Contact us today to inquire about pricing and availability, and take the first step toward optimizing your electronic designs.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 20 A
- Power - Max: 105 W
- Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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