FS50R12KT4B11BOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 50A 280W
$65.66
Available to order
Reference Price (USD)
10+
$73.85900
Exquisite packaging
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FS50R12KT4B11BOSA1
$65.66
Product details
The FS50R12KT4B11BOSA1 IGBT module from Infineon Technologies is a premium solution for high-power applications in the discrete semiconductor products segment. With its cutting-edge technology, this module delivers superior efficiency and reliability. It features low conduction losses and high thermal conductivity, ensuring optimal performance in demanding environments. The FS50R12KT4B11BOSA1 is widely used in industrial welding machines, providing stable and precise power control. It is also a preferred choice for servo drives, enhancing motion control accuracy. Furthermore, this module is ideal for renewable energy storage systems, supporting efficient energy management. For professionals seeking a high-performance IGBT module, the FS50R12KT4B11BOSA1 is a reliable option. Submit your inquiry today to explore its full potential and get a competitive quote.
General specs
- Product Status: Discontinued at Digi-Key
- IGBT Type: Trench Field Stop
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Power - Max: 280 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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