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FF23MR12W1M1B11BOMA1

Infineon Technologies
FF23MR12W1M1B11BOMA1 Preview
Infineon Technologies
MOSFET 2 N-CH 1200V 50A MODULE
$125.38
Available to order
Reference Price (USD)
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$92.77000
Exquisite packaging
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FF23MR12W1M1B11BOMA1

FF23MR12W1M1B11BOMA1

$125.38

Product details

Introducing the FF23MR12W1M1B11BOMA1 from Infineon Technologies, a high-performance MOSFET array in the Discrete Semiconductor Products category. Part of the Transistors - FETs, MOSFETs - Arrays subcategory, this product is designed for applications requiring robust power handling and efficient switching.\n\nThe FF23MR12W1M1B11BOMA1 offers features such as low gate charge, high current capability, and excellent thermal performance. The array format integrates multiple transistors, simplifying design and reducing component count. Its reliable construction ensures consistent operation in demanding environments.\n\nThis MOSFET array is widely used in home appliances, industrial drives, and telecommunications. Home appliances benefit from its energy efficiency and durability. Industrial drives utilize its high power handling for motor control. Telecommunications equipment relies on its fast switching for signal processing.\n\nReady to incorporate the FF23MR12W1M1B11BOMA1 into your projects? Submit an inquiry to get started. Our team is here to provide the support and information you need.

General specs

  • Product Status: Last Time Buy
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 50A
  • Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 15V
  • Vgs(th) (Max) @ Id: 5.55V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs: 125nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 800V
  • Power - Max: 20mW
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module

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