DMN2053UFDBQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V U-DFN2020-6
$0.14
Available to order
Reference Price (USD)
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$0.13635
500+
$0.1349865
1000+
$0.133623
1500+
$0.1322595
2000+
$0.130896
2500+
$0.1295325
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DMN2053UFDBQ-13
$0.14
Product details
The DMN2053UFDBQ-13 by Diodes Incorporated is a cutting-edge MOSFET array in the Discrete Semiconductor Products category, specifically designed for Transistors - FETs, MOSFETs - Arrays. This product delivers exceptional performance in power switching applications, making it a preferred choice for engineers.\n\nThe DMN2053UFDBQ-13 features low conduction losses, high switching frequency capability, and excellent thermal management. The array configuration allows for efficient PCB layout and reduced system complexity. Its reliable design ensures performance in a wide range of operating conditions.\n\nCommon applications include renewable energy inverters, industrial automation, and consumer power supplies. Renewable energy inverters benefit from its high efficiency and reliability. Industrial automation systems utilize its precision for control circuits. Consumer power supplies rely on its compact size and performance.\n\nDiscover the advantages of the DMN2053UFDBQ-13. Submit an inquiry today to learn more about availability and pricing. Our team is committed to supporting your project needs.
General specs
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
- Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V
- Power - Max: 820mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
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