BSP716NH6327XTSA1
Infineon Technologies
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Infineon Technologies
MOSFET N-CH 75V 2.3A SOT223-4
$0.68
Available to order
Reference Price (USD)
1,000+
$0.20205
2,000+
$0.18593
5,000+
$0.17519
10,000+
$0.16445
25,000+
$0.16266
Exquisite packaging
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Product details
General specs
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75 V
- Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 160mOhm @ 2.3A, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 218µA
- Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA