SCT3120ALHRC11
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 650V 21A TO247N
$10.83
Available to order
Reference Price (USD)
1+
$11.95000
10+
$10.98100
25+
$10.52600
100+
$9.27440
450+
$8.81920
900+
$8.25021
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Rohm Semiconductor SCT3120ALHRC11 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
SCT3120ALHRC11
$10.83
Product details
General specs
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 156mOhm @ 6.7A, 18V
- Vgs(th) (Max) @ Id: 5.6V @ 3.33mA
- Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 18 V
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 500 V
- FET Feature: -
- Power Dissipation (Max): 103W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
Viewed products
