BSM75GB170DN2HOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1700V 110A 625W
$93.33
Available to order
Reference Price (USD)
1+
$93.33000
500+
$92.3967
1000+
$91.4634
1500+
$90.5301
2000+
$89.5968
2500+
$88.6635
Exquisite packaging
Discount
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| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Infineon Technologies BSM75GB170DN2HOSA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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BSM75GB170DN2HOSA1
$93.33
Product details
General specs
- Product Status: Obsolete
- IGBT Type: -
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 110 A
- Power - Max: 625 W
- Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 75A
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module