NXH50M65L4Q1SG
onsemi
onsemi
Q1PACK 50A 650V
$56.47
Available to order
Reference Price (USD)
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$56.46857
500+
$55.9038843
1000+
$55.3391986
1500+
$54.7745129
2000+
$54.2098272
2500+
$53.6451415
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NXH50M65L4Q1SG
$56.47
Product details
Optimize your industrial systems with the NXH50M65L4Q1SG IGBT module by onsemi. This discrete semiconductor product is crafted for high-efficiency power conversion, offering unmatched reliability and performance. The module s innovative design reduces heat generation and enhances energy savings, making it suitable for continuous operation. Key applications include traction systems in railways, where consistent power delivery is essential. It is also widely used in medical imaging equipment, ensuring precise and stable operation. Additionally, the NXH50M65L4Q1SG is ideal for data center power supplies, providing uninterrupted energy flow. With its superior features and broad applicability, this IGBT module is a smart investment for any high-power application. Submit your inquiry now to learn more about how the NXH50M65L4Q1SG can meet your specific requirements.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 48 A
- Power - Max: 86 W
- Vce(on) (Max) @ Vge, Ic: 2.22V @ 15V, 50A
- Current - Collector Cutoff (Max): 300 µA
- Input Capacitance (Cies) @ Vce: 3.137 nF @ 20 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: 27-PIM (71x37.4)
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