SIHB22N60AE-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 600V 20A D2PAK
$2.29
Available to order
Reference Price (USD)
1+
$4.42000
10+
$3.95900
100+
$3.27110
500+
$2.67522
1,000+
$2.27796
3,000+
$2.17101
5,000+
$2.09461
Exquisite packaging
Discount
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| EMS | 3-7 days |
Vishay Siliconix SIHB22N60AE-GE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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SIHB22N60AE-GE3
$2.29
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 179W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D²Pak)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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