BSC050N10NS5ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 16A/100A TDSON
$3.52
Available to order
Reference Price (USD)
5,000+
$1.30402
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BSC050N10NS5ATMA1
$3.52
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 72µA
- Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 136W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-7
- Package / Case: 8-PowerTDFN
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