IMBF170R650M1XTMA1
Infineon Technologies
Infineon Technologies
SICFET N-CH 1700V 7.4A TO263-7
$7.94
Available to order
Reference Price (USD)
1+
$7.94000
500+
$7.8606
1000+
$7.7812
1500+
$7.7018
2000+
$7.6224
2500+
$7.543
Exquisite packaging
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| TNT | 2-6 days |
| EMS | 3-7 days |
Infineon Technologies IMBF170R650M1XTMA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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IMBF170R650M1XTMA1
$7.94
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
- Rds On (Max) @ Id, Vgs: 650mOhm @ 1.5A, 15V
- Vgs(th) (Max) @ Id: 5.7V @ 1.7mA
- Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 12 V
- Vgs (Max): +20V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 88W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-13
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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