BSC016N04LSGATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 31A/100A TDSON
$3.14
Available to order
Reference Price (USD)
5,000+
$1.02002
10,000+
$0.99862
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| TNT | 2-6 days |
| EMS | 3-7 days |
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BSC016N04LSGATMA1
$3.14
Product details
General specs
- Product Status: Last Time Buy
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2V @ 85µA
- Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-1
- Package / Case: 8-PowerTDFN
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