IPAN60R600P7SXKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 6A TO220
$1.33
Available to order
Reference Price (USD)
1+
$1.33000
500+
$1.3167
1000+
$1.3034
1500+
$1.2901
2000+
$1.2768
2500+
$1.2635
Exquisite packaging
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| EMS | 3-7 days |
Infineon Technologies IPAN60R600P7SXKSA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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IPAN60R600P7SXKSA1
$1.33
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
- Vgs(th) (Max) @ Id: 4V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 21W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220 Full Pack
- Package / Case: TO-220-3 Full Pack
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