BSB104N08NP3GXUSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 80V 13A/50A 2WDSON
$0.99
Available to order
Reference Price (USD)
5,000+
$0.65850
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| EMS | 3-7 days |
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BSB104N08NP3GXUSA1
$0.99
Product details
General specs
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 10.4mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 42W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: MG-WDSON-2, CanPAK M™
- Package / Case: 3-WDSON
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