IRFIB5N65APBF
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 650V 5.1A TO220-3
$4.58
Available to order
Reference Price (USD)
1+
$4.18000
50+
$3.35780
100+
$3.05940
500+
$2.47734
1,000+
$2.08932
2,500+
$1.98485
5,000+
$1.91023
Exquisite packaging
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| EMS | 3-7 days |
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IRFIB5N65APBF
$4.58
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 930mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3 Full Pack, Isolated Tab
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