BSB013NE2LXIXUMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 25V 36A/163A 2WDSON
$1.95
Available to order
Reference Price (USD)
5,000+
$0.85800
10,000+
$0.84000
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| TNT | 2-6 days |
| EMS | 3-7 days |
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BSB013NE2LXIXUMA1
$1.95
Product details
General specs
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 163A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: MG-WDSON-2, CanPAK M™
- Package / Case: 3-WDSON
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