Shopping cart

Subtotal: $0.00

IPB054N06N3GATMA1

Infineon Technologies
IPB054N06N3GATMA1 Preview
Infineon Technologies
MOSFET N-CH 60V 80A D2PAK
$1.96
Available to order
Reference Price (USD)
1,000+
$0.71990
2,000+
$0.67190
5,000+
$0.63831
10,000+
$0.61431
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Infineon Technologies IPB054N06N3GATMA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
IPB054N06N3GATMA1

IPB054N06N3GATMA1

$1.96

Product details

Discover the exceptional capabilities of Infineon Technologies's IPB054N06N3GATMA1, a premium single MOSFET transistor in the Discrete Semiconductor Products category (Transistors - FETs, MOSFETs - Single). This high-efficiency component is engineered to meet the rigorous demands of modern power electronics, offering superior performance in switching and amplification applications. The IPB054N06N3GATMA1 boasts impressive technical features including optimized gate control, low leakage current, and excellent thermal management properties. Its robust design ensures reliable operation in various environmental conditions, from industrial settings to outdoor installations. The MOSFET's versatile nature makes it ideal for use in electric powertrains, industrial automation controllers, and high-frequency power converters. For consumer applications, it's perfect for high-performance computing, advanced gaming systems, and next-generation home appliances. The component also finds significant utility in green energy applications such as photovoltaic systems and energy storage solutions. With its balanced combination of power handling and efficiency, the IPB054N06N3GATMA1 provides an optimal solution for your most challenging design requirements. Interested in learning more about how this MOSFET can enhance your projects? Our team is ready to assist simply submit your inquiry through our online portal for personalized support and competitive pricing options.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 5.4mOhm @ 80A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 58µA
  • Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 30 V
  • FET Feature: -
  • Power Dissipation (Max): 115W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Viewed products

Diodes Incorporated

DMP2023UFDF-7

$0.00 (not set)
Diodes Incorporated

DMN21D2UFB-7

$0.00 (not set)
onsemi

FDMC86520L

$0.00 (not set)
onsemi

FQU17P06TU

$0.00 (not set)
IXYS

IXTP14N60X2

$0.00 (not set)
Fairchild Semiconductor

FQD1N60TM

$0.00 (not set)
onsemi

FDMA530PZ

$0.00 (not set)
Alpha & Omega Semiconductor Inc.

AON7528

$0.00 (not set)
Micro Commercial Co

SI2301A-TP

$0.00 (not set)
Littelfuse Inc.

LSIC1MO120G0025

$0.00 (not set)
Top