BCR129SH6327XTSA1
Infineon Technologies
Infineon Technologies
TRANS 2NPN PREBIAS 0.25W SOT363
$0.06
Available to order
Reference Price (USD)
18,000+
$0.05326
Exquisite packaging
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BCR129SH6327XTSA1
$0.06
Product details
Explore the BCR129SH6327XTSA1 from Infineon Technologies, a premium pre-biased bipolar junction transistor (BJT) array in the Discrete Semiconductor Products category, specifically Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is designed for superior performance in amplification and switching applications, delivering unmatched reliability and efficiency. The BCR129SH6327XTSA1 features built-in pre-biasing, simplifying circuit design and improving functionality. Its excellent thermal properties ensure stable operation across a broad temperature range. Ideal for automotive electronics, audio systems, and power supplies, the BCR129SH6327XTSA1 provides consistent and precise performance. This transistor array is also commonly found in aerospace applications, security systems, and wearable devices. With high gain and low power consumption, the BCR129SH6327XTSA1 is perfect for energy-sensitive designs. The durable and compact construction of this BJT array makes it a cost-effective choice for various projects. To discover how the BCR129SH6327XTSA1 can meet your specific needs, request a quote today and our specialists will provide you with comprehensive support.
General specs
- Product Status: Not For New Designs
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 150MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-PO
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