BCR523UE6433HTMA1
Infineon Technologies
Infineon Technologies
TRANS 2NPN PREBIAS 0.33W SC74
$0.16
Available to order
Reference Price (USD)
10,000+
$0.09358
Exquisite packaging
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BCR523UE6433HTMA1
$0.16
Product details
Enhance your electronic designs with the BCR523UE6433HTMA1 from Infineon Technologies, a top-grade pre-biased bipolar junction transistor (BJT) array. This product is part of the Discrete Semiconductor Products category, specifically Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The BCR523UE6433HTMA1 is designed to deliver exceptional performance in amplification and switching applications, offering high reliability and efficiency. Its pre-biased configuration simplifies circuit design and enhances overall performance. The transistor array features excellent thermal management, ensuring stable operation in various environments. Perfect for power management systems, audio amplifiers, and sensor interfaces, the BCR523UE6433HTMA1 provides consistent and accurate results. It is also commonly used in medical devices, telecommunications equipment, and home automation systems. With its high gain and low power consumption, the BCR523UE6433HTMA1 is ideal for energy-efficient applications. The durable and compact design of this BJT array makes it a versatile choice for diverse projects. To learn more about how the BCR523UE6433HTMA1 can benefit your project, contact us for a detailed quote and expert technical support.
General specs
- Product Status: Not For New Designs
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 1kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): -
- Frequency - Transition: 100MHz
- Power - Max: 330mW
- Mounting Type: Surface Mount
- Package / Case: SC-74, SOT-457
- Supplier Device Package: PG-SC74-6
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