BCR112E6327HTSA1
Infineon Technologies
Infineon Technologies
TRANS PREBIAS NPN 0.2W SOT23-3
$0.35
Available to order
Reference Price (USD)
3,000+
$0.03934
6,000+
$0.03458
15,000+
$0.02982
30,000+
$0.02824
75,000+
$0.02665
150,000+
$0.02401
Exquisite packaging
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BCR112E6327HTSA1
$0.35
Product details
Infineon Technologies's BCR112E6327HTSA1 redefines reliability in pre-biased bipolar transistors, featuring a monolithic design that combines transistor and bias resistors. The device demonstrates exceptional linearity for analog circuits while maintaining low harmonic distortion. Its ESD protection and moisture-resistant packaging ensure longevity in harsh environments. Primary applications encompass smart home controllers, HVAC system interfaces, and robotics motor drivers. The transistor's fast switching capability suits pulse-width modulation (PWM) designs, whereas its stable DC gain benefits sensor signal chains. For engineers seeking drop-in replacements for discrete solutions, the BCR112E6327HTSA1 offers immediate performance upgrades. Contact our sales team for application notes and sample requests.
General specs
- Product Status: Not For New Designs
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 140 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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