PDTA123JTVL
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS PNP 250MW TO236AB
$0.17
Available to order
Reference Price (USD)
10,000+
$0.02655
30,000+
$0.02419
50,000+
$0.02183
100,000+
$0.02065
250,000+
$0.01947
Exquisite packaging
Discount
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| EMS | 3-7 days |
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PDTA123JTVL
$0.17
Product details
Precision-engineered for signal integrity, Nexperia USA Inc.'s PDTA123JTVL pre-biased BJT offers predictable gain characteristics critical for feedback systems. The transistor's monolithic construction ensures perfect resistor matching, eliminating thermal drift issues in differential amplifiers. Target applications include industrial process control instrumentation, laboratory equipment signal paths, and avionics data acquisition modules. Its gold-bonded leads provide corrosion resistance in high-humidity environments, while the halogen-free mold compound meets ecological directives. The device supports high-frequency operation up to VHF ranges when properly impedance-matched. Access reference designs incorporating PDTA123JTVL by submitting a project brief through our engineering collaboration portal.
General specs
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: -
- Power - Max: 250 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
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