AIMW120R045M1XKSA1
Infineon Technologies
Infineon Technologies
SICFET N-CH 1200V 52A TO247-3
$24.04
Available to order
Reference Price (USD)
1+
$24.04000
500+
$23.7996
1000+
$23.5592
1500+
$23.3188
2000+
$23.0784
2500+
$22.838
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Infineon Technologies AIMW120R045M1XKSA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
AIMW120R045M1XKSA1
$24.04
Product details
Infineon Technologies presents the AIMW120R045M1XKSA1, a high-efficiency single MOSFET transistor that excels in the Discrete Semiconductor Products category (Transistors - FETs, MOSFETs - Single). This component combines innovative semiconductor technology with practical design features to deliver superior performance in power management applications. The AIMW120R045M1XKSA1 offers significant advantages including optimized switching behavior, reduced conduction losses, and enhanced thermal performance. These characteristics translate to improved system efficiency and reliability in your electronic designs. The MOSFET is particularly effective in medical imaging equipment, laboratory instrumentation, and diagnostic devices where precision power control is essential. Industrial applications benefit from its use in CNC machinery, packaging systems, and material handling equipment. For the energy sector, it's ideal for smart grid components and power monitoring systems. The AIMW120R045M1XKSA1 also performs exceptionally in professional lighting systems and advanced HVAC controls. With its robust construction and electrical efficiency, this component provides design engineers with a reliable solution for diverse power switching requirements. Interested in incorporating this high-performance MOSFET into your designs? Submit your inquiry through our online platform to receive comprehensive product details, technical support, and competitive pricing information from our expert team.
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 59mOhm @ 20A, 15V
- Vgs(th) (Max) @ Id: 5.7V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
- Vgs (Max): +20V, -7V
- Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 228W (Tc)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
Viewed products
