AIGB30N65H5ATMA1
Infineon Technologies
Infineon Technologies
DISCRETE SWITCHES
$4.31
Available to order
Reference Price (USD)
1+
$4.31000
500+
$4.2669
1000+
$4.2238
1500+
$4.1807
2000+
$4.1376
2500+
$4.0945
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Infineon Technologies AIGB30N65H5ATMA1 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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AIGB30N65H5ATMA1
$4.31
Product details
Maximize power efficiency with the AIGB30N65H5ATMA1 single IGBT transistor by Infineon Technologies. This high-quality component is engineered for applications requiring robust switching and thermal stability, such as renewable energy systems, industrial welding machines, and electric vehicle powertrains. The AIGB30N65H5ATMA1 features low switching losses and high current capacity, ensuring reliable performance in demanding conditions. Its compact design and ease of integration make it a favorite among power electronics designers. Whether you're working on large-scale industrial projects or compact consumer electronics, the AIGB30N65H5ATMA1 delivers the performance you need. Get started today by submitting an online inquiry for pricing and availability.
General specs
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3-2
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