FGH15T120SMD-F155
onsemi

onsemi
IGBT 1200V 30A 333W TO247-3
$5.99
Available to order
Reference Price (USD)
1+
$4.45000
10+
$4.01300
450+
$3.15038
900+
$2.84116
1,350+
$2.41801
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Product details
Experience unparalleled power control with the FGH15T120SMD-F155 single IGBT transistor by onsemi. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The FGH15T120SMD-F155 boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the FGH15T120SMD-F155 offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.
General specs
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
- Power - Max: 333 W
- Switching Energy: 1.15mJ (on), 460µJ (off)
- Input Type: Standard
- Gate Charge: 128 nC
- Td (on/off) @ 25°C: 32ns/490ns
- Test Condition: 600V, 15A, 34Ohm, 15V
- Reverse Recovery Time (trr): 72 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3