G110N06T
Goford Semiconductor
Goford Semiconductor
N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.
$1.74
Available to order
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$1.74000
500+
$1.7226
1000+
$1.7052
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$1.6878
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$1.6704
2500+
$1.653
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G110N06T
$1.74
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.4mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5538 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 120W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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