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SIHP21N80AE-GE3

Vishay Siliconix
SIHP21N80AE-GE3 Preview
Vishay Siliconix
MOSFET N-CH 800V 17.4A TO220AB
$4.55
Available to order
Reference Price (USD)
1+
$4.81000
10+
$4.29600
100+
$3.52230
500+
$2.85222
1,000+
$2.40548
3,000+
$2.28521
Exquisite packaging
Discount
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TNT 2-6 days
EMS 3-7 days

Vishay Siliconix SIHP21N80AE-GE3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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SIHP21N80AE-GE3

SIHP21N80AE-GE3

$4.55

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 17.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 235mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 1388 pF @ 100 V
  • FET Feature: -
  • Power Dissipation (Max): 32W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3

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