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TSM300NB06CR RLG

Taiwan Semiconductor Corporation
TSM300NB06CR RLG Preview
Taiwan Semiconductor Corporation
MOSFET N-CH 60V 6A/27A 8PDFN
$1.56
Available to order
Reference Price (USD)
2,500+
$0.24708
5,000+
$0.23856
Exquisite packaging
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TSM300NB06CR RLG

TSM300NB06CR RLG

$1.56

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 30 V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 56W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PDFN (5.2x5.75)
  • Package / Case: 8-PowerLDFN

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