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GE12047BCA3

General Electric
GE12047BCA3 Preview
General Electric
1200V 475A SiC Dual Module
$1,925.00
Available to order
Reference Price (USD)
1+
$1925.00000
500+
$1905.75
1000+
$1886.5
1500+
$1867.25
2000+
$1848
2500+
$1828.75
Exquisite packaging
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GE12047BCA3

GE12047BCA3

$1,925.00

Product details

The GE12047BCA3 from General Electric is a high-performance MOSFET array designed for efficient power management in compact electronic systems. This product is part of the Discrete Semiconductor Products category, specifically under Transistors - FETs, MOSFETs - Arrays, offering reliable switching capabilities and low power dissipation. Ideal for applications requiring multiple FETs in a single package, the GE12047BCA3 ensures enhanced circuit density and simplified design.\n\nKey features of the GE12047BCA3 include optimized gate charge for fast switching, low on-resistance for reduced conduction losses, and excellent thermal performance. The array configuration allows for seamless integration into designs needing multiple transistors, saving board space and improving overall system efficiency. With robust construction and high reliability, this MOSFET array is suitable for demanding environments.\n\nThe GE12047BCA3 is widely used in power supplies, motor control systems, and audio amplifiers. In power supplies, it enables efficient voltage regulation and energy conversion. For motor control, it provides precise switching for smooth operation. Audio amplifiers benefit from its low distortion and high fidelity performance.\n\nReady to integrate the GE12047BCA3 into your next project? Submit an inquiry today to get pricing and availability details. Our team is here to assist with your procurement needs.

General specs

  • Product Status: Active
  • FET Type: 2 Independent
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 475A
  • Rds On (Max) @ Id, Vgs: 4.4mOhm @ 475A, 20V
  • Vgs(th) (Max) @ Id: 4.5V @ 160mA
  • Gate Charge (Qg) (Max) @ Vgs: 1248nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 29.3nF @ 600V
  • Power - Max: 1250W
  • Operating Temperature: -55°C ~ 150°C (Tc)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -

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