IPG20N04S412AATMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 40V 20A 8TDSON
$1.33
Available to order
Reference Price (USD)
5,000+
$0.48103
Exquisite packaging
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| EMS | 3-7 days |
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IPG20N04S412AATMA1
$1.33
Product details
The IPG20N04S412AATMA1 by Infineon Technologies is a premium MOSFET array in the Discrete Semiconductor Products category, specifically under Transistors - FETs, MOSFETs - Arrays. This product is engineered for high-efficiency power switching, making it ideal for advanced electronic systems.\n\nNotable features of the IPG20N04S412AATMA1 include optimized switching performance, low on-resistance, and excellent thermal conductivity. The array configuration allows for compact and efficient designs, reducing overall system complexity. Its high reliability ensures long-term performance in various applications.\n\nApplications include data centers, automotive infotainment, and portable devices. Data centers benefit from its efficiency in power distribution. Automotive infotainment systems rely on its performance for audio and display controls. Portable devices utilize its compact size and low power consumption.\n\nExplore the benefits of the IPG20N04S412AATMA1. Request a quote today to learn more about how it can enhance your designs. Our team is ready to assist with your technical and procurement needs.
General specs
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 4V @ 15µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
- Power - Max: 41W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PG-TDSON-8-10
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